According to the physicist organization network on October 11 (Beijing time), researchers from Rice University in the United States are expected to design and manufacture more efficient electronic devices and new types of security and encryption devices by combining graphene and light. Related research reports were published in the recently published "American Chemical Society Nano" magazine.
Normally, the properties of silicon semiconductors are adjusted by chemically doping silicon. This study subverted this idea: instead of using a plasmon to induce graphene doping, a single-atom-thick carbon morphology with super-strong and good conductivity was formed. The new doping method can make circuits based on graphene and plasma antennas, that is, optically induced electronic devices. Optically induced electronic devices can manipulate light and inject electrons into the material to affect its conductivity. This research encompasses both theoretical and research work, demonstrating the potential for making simple, graphene-based diodes and transistors on demand.
The researchers said that doping graphene is a key parameter for the development of graphene electronic devices. They envisioned many ways to dope graphene, including attaching organic or magnetic molecules to the hexagonal grid of graphene, making it selective and reversible. The angle and the polarization of the illuminating light can construct and erase the circuit at will.
The realization that the plasma nano-antenna is attached to graphene makes this idea possible. Scientists have extensive experience in manipulating plasmons, and such quasi-particles can trigger vibrations on metal surfaces. In earlier research, they successfully deposited plasma nanoparticles, making them act as graphene-based photodetectors.
Plasmon oscillators can flow across the surface when light is excited or made into "hot electrons" and control the wavelength, and nearby plasma particles can also interact in a tunable manner. In this experiment, eight nanometer-level gold disk plasma antennas were used, surrounded by a larger disk, which were deposited on the surface of graphene by electron beam lithography. Each antenna can be adjusted between 500 nm and 1250 nm based on scattered light, but destructive interference occurs at 825 nm. In this case, most of the incident light energy will be converted into hot electrons, directly transmitted to the graphite sheet, and converted from a conductor into a negatively doped (n-doped) semiconductor.
Researchers foresee that one day we can open the door without using a key, simply waving the flashlight to illuminate the base, inducing the formation of the required integrated circuit. And this day seems to be no longer far away.
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